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Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells
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10.1063/1.2159566
/content/aip/journal/apl/88/1/10.1063/1.2159566
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2159566

Figures

Image of FIG. 1.
FIG. 1.

(a) (002)-Dark-field TEM images of SQWs grown at different temperatures: (a) as grown and (b) after standard annealing.

Image of FIG. 2.
FIG. 2.

(Color online) RT PL data for SQWs grown at different temperatures as grown (solid lines), after standard-annealing (dashed lines), and after optimized annealing (dashed-dotted lines). The excitation density was about . (a) Integrated peak intensities. (b) Peak positions.

Image of FIG. 3.
FIG. 3.

(Color online) Localization energy for SQWs grown at different temperatures as grown (solid line), after standard-annealing (dashed line), and after optimized annealing (dashed-dotted line). The data were extracted from the temperature dependence of the PL peak energy (excitation density about ). Each value is the maximum deviation from a Varshni fit to the high-temperature part of the curve.

Image of FIG. 4.
FIG. 4.

(Color online) Radiative (a) and nonradiative (b) decay times at room temperature for SQWs grown at different temperatures: As grown (solid lines), after standard annealing (dashed lines), and after optimized annealing (dashed-dotted lines).

Tables

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Table I.

Optimized annealing conditions that yielded the highest room temperature PL intensities. Standard annealing conditions are and .

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/content/aip/journal/apl/88/1/10.1063/1.2159566
2006-01-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2159566
10.1063/1.2159566
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