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XPS depth profiles at intervals of for thick yttrium (Y) on silicon (Si) for as-deposited (as-dep) films and films annealed at , , , and for a fixed annealing duration of . The dotted arrow in each plot indicates the direction of increasing depth profiles towards the interface. The mixing of Y and Si is observed from the shift of the XPS peak to a binding energy lower than that expected for Si–Si (i.e., ).
Fitted (a) and (b) XPS plots of as-deposited thick yttrium on silicon after exposure to ambient. The silicate peak is fitted using 10–20% Lorentzian–Gaussian profiles with binding energy at , , and , which show different ratios of Y–O–Si bonding.
(a) and (b) XPS depth profiles of as-deposited thick yttrium on silicon after exposure to ambient. XPS depth profile scans were performed at intervals of of argon-ion sputtering with an estimated sputter rate of . The peaks were aligned with the peak at .
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