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Absorption spectra of Ga-doped ZnO films for different electron concentrations. In the samples with high carrier concentration, a low-energy free-carrier absorption-reflection edge is present.
Change of the absorption edge of nondoped and Ga-doped ZnO in the W and RS phases.
Pressure dependence of the resistivity (a), the electron concentration (b), and the electron mobility (c) of Ga-doped ZnO films, deposited on GaS and mica, with different electron concentrations.
Change of the free-carrier absorption-reflection edge in the W-to-RS transition for a Ga-doped ZnO thin film.
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