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High conductivity of Ga-doped rock-salt ZnO under pressure: Hint on deep-ultraviolet-transparent conducting oxides
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10.1063/1.2161392
/content/aip/journal/apl/88/1/10.1063/1.2161392
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2161392
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Absorption spectra of Ga-doped ZnO films for different electron concentrations. In the samples with high carrier concentration, a low-energy free-carrier absorption-reflection edge is present.

Image of FIG. 2.
FIG. 2.

Change of the absorption edge of nondoped and Ga-doped ZnO in the W and RS phases.

Image of FIG. 3.
FIG. 3.

Pressure dependence of the resistivity (a), the electron concentration (b), and the electron mobility (c) of Ga-doped ZnO films, deposited on GaS and mica, with different electron concentrations.

Image of FIG. 4.
FIG. 4.

Change of the free-carrier absorption-reflection edge in the W-to-RS transition for a Ga-doped ZnO thin film.

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/content/aip/journal/apl/88/1/10.1063/1.2161392
2006-01-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High conductivity of Ga-doped rock-salt ZnO under pressure: Hint on deep-ultraviolet-transparent conducting oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2161392
10.1063/1.2161392
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