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Laser-controlled stress of Si nanocrystals in a free-standing superlattice
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10.1063/1.2161399
/content/aip/journal/apl/88/1/10.1063/1.2161399
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2161399
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Figures

Image of FIG. 1.
FIG. 1.

(a) Raman spectra of silicon. Shown are (from bottom to top) the spectra of the as-prepared free-standing superlattice, a wafer, the free-standing superlattice after short laser heating above Si melting temperature (HTA1), the same sample after at (LTA1), after additional laser annealing below Si melting temperature (LTA2), and after additional annealing above Si melting temperature (HTA2). Notice the multiplication factor for the lowest spectrum. The laser excitation power is giving only a small effect on the Raman bands. (b) Raman band intensity after various laser annealing steps above (HTA) and below (LTA) Si melting temperature.

Image of FIG. 2.
FIG. 2.

Typical dependence of temperature in the irradiated spot on the laser power. The temperatures were obtained from the anti-Stokes to Stokes intensity ratios. The inset shows the emission at as a function of temperature. The anti-Stokes to Stokes ratio could not be measured at because of a strong thermal emission background.

Image of FIG. 3.
FIG. 3.

(a) Raman shift as a function of laser annealing time at 790 and showing the temperature-induced relaxation of Si-nc stress. The stress scale is marked. The temperatures were obtained from the anti-Stokes to Stokes intensity ratios. The horizontal dotted line shows the Raman shift of . The presented Raman shifts are measured with a laser power of . (b) The characteristic stress decay time as a function of the reverse temperature.

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/content/aip/journal/apl/88/1/10.1063/1.2161399
2006-01-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser-controlled stress of Si nanocrystals in a free-standing Si∕SiO2 superlattice
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/1/10.1063/1.2161399
10.1063/1.2161399
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