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Optical transmittance spectra of the IZO films at the as-deposited state and after being annealed at , , and in vacuum for . The inset shows the curve of the IZO contacts to phosphorus doped -type ZnO at the as-deposited state and the same annealing temperatures in a vacuum for .
SIMS depth profile spectra of the samples: (a) As-deposited and (b) after annealing at for in a vacuum.
XRD spectra of the as-deposited IZO sample and the samples at various annealing conditions. The values of ZnO (002) plane, ZnO (004) plane, (008) planes, and (00 15) plane are 34.400 (Ref. 23), 72.516 (Ref. 23), 31.008 (Ref. 24), and 31.547 (Ref. 25), respectively. The inset shows an expanded view of the diffraction peak between and 32°.
The carrier concentrations and mobilities of ZnO films (after wet etch) and as-deposited IZO films and subsequent annealing at , and in a vacuum for .
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