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(a) Illustration of our approach allowing straining of thin Si films with the use of bulk partially oxidized porous Si nanostructures. (b) TEM photo and electron diffraction pictures of the structure.
Raman spectra corresponding to the PS nanostructures (a) and to the thin monocrystalline Si films (b).
Stress and strain evolution in the thin Si films with oxidation temperature.
Photoluminescence spectra of the strained Si films obtained at and at two different laser excitation wavelengths: 488 (a) and (b).
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