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Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial
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10.1063/1.2179620
/content/aip/journal/apl/88/10/10.1063/1.2179620
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2179620
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Figures

Image of FIG. 1.
FIG. 1.

(a) Illustration of our approach allowing straining of thin Si films with the use of bulk partially oxidized porous Si nanostructures. (b) TEM photo and electron diffraction pictures of the structure.

Image of FIG. 2.
FIG. 2.

Raman spectra corresponding to the PS nanostructures (a) and to the thin monocrystalline Si films (b).

Image of FIG. 3.
FIG. 3.

Stress and strain evolution in the thin Si films with oxidation temperature.

Image of FIG. 4.
FIG. 4.

Photoluminescence spectra of the strained Si films obtained at and at two different laser excitation wavelengths: 488 (a) and (b).

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/content/aip/journal/apl/88/10/10.1063/1.2179620
2006-03-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Straining of monocrystalline silicon thin films with the use of porous silicon as stress generating nanomaterial
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2179620
10.1063/1.2179620
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