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Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
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10.1063/1.2182028
/content/aip/journal/apl/88/10/10.1063/1.2182028
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182028
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Figures

Image of FIG. 1.
FIG. 1.

Typical PL spectra measured at 3 and from the epitaxial layers grown with ion collector off (thin lines) and with ion collector on (thick lines). The spectra are not calibrated by the instrument response. (The features around 1.03 and are due to the optical response of the grating.) Near IR PL emission at was too weak to be detected.

Image of FIG. 2.
FIG. 2.

The Arrhenius plots of the integrated intensity of the visible PL emissions measured from the epitaxial layers grown without (squares) and with (circles) the ion collector. Squares and circles represent the experimental data. The lines are fitting curves by Eq. (1) with the same activation energies for both samples: and .

Image of FIG. 3.
FIG. 3.

ODMR spectra at from the epilayers grown with the ion collector off and on, measured at by monitoring visible PL emissions (within the spectral range ). The optical excitation power was and .

Image of FIG. 4.
FIG. 4.

ODMR spectra at from the epilayers grown with the ion collector off and on, measured at by monitoring the near IR PL emissions (within the spectral range ). The magnetic field is parallel to the [111]-direction and the optical excitation power was about . The ODMR spectrum from the GaP substrate is shown as the lowest curve. In the upper part, the simulated ODMR spectra of the deep center (“”) and the defect are also displayed. The spin Hamiltonian parameters for the were determined to be effective electron spin , nuclear spin , , and . The value of the defect is deduced to be 2.

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/content/aip/journal/apl/88/10/10.1063/1.2182028
2006-03-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182028
10.1063/1.2182028
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