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Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
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10.1063/1.2182028
/content/aip/journal/apl/88/10/10.1063/1.2182028
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182028
/content/aip/journal/apl/88/10/10.1063/1.2182028
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/content/aip/journal/apl/88/10/10.1063/1.2182028
2006-03-06
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182028
10.1063/1.2182028
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