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Influence of bicrystal microstructural defects on high-transition-temperature direct-current superconducting quantum interference device
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10.1063/1.2182066
/content/aip/journal/apl/88/10/10.1063/1.2182066
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182066

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The surface morphology of a bicrystal substrate probed with AFM. (b) The schematic plot of multi-SQUID arrangement of the magnetometer.

Image of FIG. 2.
FIG. 2.

The surface morphology of different junctions probed with SEM: (a) the good junction, (b) and (c) the mediocre junctions, and (d) the bad junction. The arrow indicates the location of grain boundary. (e) Formation of YBCO grains on the junction. (f) The depth of junction in (d) measured by AFM.

Image of FIG. 3.
FIG. 3.

(Color online) The electrical properties of SQUID for mediocre junctions (a) annealed at , (b) without annealing; for bad junctions (c) annealed at (d) without annealing and (e) with semiconductor behavior.

Image of FIG. 4.
FIG. 4.

(Color online) The low-frequency flux noise of SQUIDs labeled (a) and (b) are good junctions, and labeled (c) and (d) are mediocre junctions.

Tables

Generic image for table
Table I.

The electrical properties of SQUIDs with different junction widths and groove depths. All the properties are measured at .

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/content/aip/journal/apl/88/10/10.1063/1.2182066
2006-03-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of bicrystal microstructural defects on high-transition-temperature direct-current superconducting quantum interference device
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182066
10.1063/1.2182066
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