1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Random telegraph signal in nanoscale back-side charge trapping memories
Rent:
Rent this article for
USD
10.1063/1.2182070
/content/aip/journal/apl/88/10/10.1063/1.2182070
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182070
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of a back-side charge trapping memory device and TEM cross-sectional image of the back oxide–nitride–oxide (ONO) stack between the single crystal silicon substrate (back gate) and the single crystal silicon channel.

Image of FIG. 2.
FIG. 2.

Front channel output characteristics of a back-side charging device exhibiting RTS features: . , , .

Image of FIG. 3.
FIG. 3.

Transfer characteristics of a back-side trapping memory device illustrating the double gate operation of the device and RTS features: ; (a) front channel transfer characteristics: , ; varies from to in increments and (b) back channel transfer characteristics: , ; varies from to in increments.

Image of FIG. 4.
FIG. 4.

(a) RTS due to a trap located in the back ONO stack for five different back-gate voltages for the device shown in Fig. 3. , , , , and . , and . . (b) Ratio of average capture time and average emission time as a function of the back-gate bias. varies from to in steps.

Loading

Article metrics loading...

/content/aip/journal/apl/88/10/10.1063/1.2182070
2006-03-09
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Random telegraph signal in nanoscale back-side charge trapping memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2182070
10.1063/1.2182070
SEARCH_EXPAND_ITEM