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Schematics of a back-side charge trapping memory device and TEM cross-sectional image of the back oxide–nitride–oxide (ONO) stack between the single crystal silicon substrate (back gate) and the single crystal silicon channel.
Front channel output characteristics of a back-side charging device exhibiting RTS features: . , , .
Transfer characteristics of a back-side trapping memory device illustrating the double gate operation of the device and RTS features: ; (a) front channel transfer characteristics: , ; varies from to in increments and (b) back channel transfer characteristics: , ; varies from to in increments.
(a) RTS due to a trap located in the back ONO stack for five different back-gate voltages for the device shown in Fig. 3. , , , , and . , and . . (b) Ratio of average capture time and average emission time as a function of the back-gate bias. varies from to in steps.
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