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Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas
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10.1063/1.2185254
/content/aip/journal/apl/88/10/10.1063/1.2185254
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2185254
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Figures

Image of FIG. 1.
FIG. 1.

Schematic drawing of experimental apparatus.

Image of FIG. 2.
FIG. 2.

Time series of (a) etching rate and (b) exhaust gas concentration (FTIR) during the experiment with addition in a gas mixture of , , and . Gas mixture of , , and Ar were added and ignited at time , the pressure of the plasma source was adjusted to at time , then was added in at time and stopped at . Later, was added and stopped at and .

Image of FIG. 3.
FIG. 3.

Time series of (a) etching rate and (b) exhaust gas concentration (FTIR) during the experiment of transient shut off. A gas mixture of , , and were ignited at time , and the pressure was adjusted to at time, . At time zero, the flow rate was shut off for and reopened. Finally the plasma and gases are turned off at time .

Image of FIG. 4.
FIG. 4.

Comparison of ion species concentration with or without addition in the plasma of , , and , as measured by mass spectrometer.

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/content/aip/journal/apl/88/10/10.1063/1.2185254
2006-03-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2185254
10.1063/1.2185254
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