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Overlays of Cu depth distributions (arb. units, right scale) for Si samples implanted with Ge ions to (a) and (b) after annealing of 900 °C, and the corresponding bright field XTEM images of cleaved specimen after annealing of . The weak beam micrograph inset in Fig. 1(b) (top left) shows dislocation loops close to the surface as bright spots. The calculated depth distribution of excess defects, the difference of interstitials and vacancies, is indicated in Fig. 1(a) (black line). The excess defect profile also includes the atom.
Comparison between Cu depth distribution (arb. units, right scale) and strain profile (, left scale without axis title) in Si after Ge ion implantation with , and annealing at 900 °C for and the profile of excess defects , calculated according to the model (a). The bright field XTEM micrograph of cleaved specimen taken in (220) two beam case shows an overview of the distribution of interstitial-type dislocation loops (b). Micrographs taken in higher magnification, kinematical conditions, underfocus (c) show cavities as bright spots with dark ring for different depth regions corresponding to the Cu peaks labeled in Fig. 2(a).
Scheme of damage evolution during implantation vs the accumulated defect generation normalized by the amorphization level (: defect generation per ion, : ion fluence). Defect reactions controlling the defect state after annealing are indicated in the four different sections. In the defect clustering section the +1 model is not valid. The defect state is controlled by vacancy and interstitial clustering in addition to vacancy-interstitial recombination. The straight dotted line indicates the path of damage accumulation without in situ dynamical annealing. The dashed line represents the path of damage saturation.
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