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In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)
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10.1063/1.2186106
/content/aip/journal/apl/88/10/10.1063/1.2186106
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186106
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of experimental setup for in situ x-ray diffraction of growth.

Image of FIG. 2.
FIG. 2.

(a) Typical x-ray CCD image during InAs growth on GaAs(001) at . The coverage of the InAs is 3.5 ML. The vertical and horizontal axes represent the relative lattice constant with respect to the substrate and the exit angle measured from the surface, respectively. (b) X-ray intensity integrated over horizontal axis as a function of lattice constant. (c) X-ray intensity modulation at relative lattice constant of 1.07 as a function of exit angle normalized by critical angle for total reflection of x rays.

Image of FIG. 3.
FIG. 3.

Temporal evolution of strain distribution and height of InAs islands grown at . The contours are drawn on a linear scale.

Image of FIG. 4.
FIG. 4.

Temporal evolution of strain distribution and height of InAs islands grown at .

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/content/aip/journal/apl/88/10/10.1063/1.2186106
2006-03-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186106
10.1063/1.2186106
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