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Schematic of experimental setup for in situ x-ray diffraction of growth.
(a) Typical x-ray CCD image during InAs growth on GaAs(001) at . The coverage of the InAs is 3.5 ML. The vertical and horizontal axes represent the relative lattice constant with respect to the substrate and the exit angle measured from the surface, respectively. (b) X-ray intensity integrated over horizontal axis as a function of lattice constant. (c) X-ray intensity modulation at relative lattice constant of 1.07 as a function of exit angle normalized by critical angle for total reflection of x rays.
Temporal evolution of strain distribution and height of InAs islands grown at . The contours are drawn on a linear scale.
Temporal evolution of strain distribution and height of InAs islands grown at .
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