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Temperature-dependent strain relaxation of the barrier in heterostructures with and without surface passivation
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10.1063/1.2186369
/content/aip/journal/apl/88/10/10.1063/1.2186369
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186369
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The (0002) XRD scan of the partially strain-relaxed heterostructure at before and after the high-temperature measurement.

Image of FIG. 2.
FIG. 2.

The temperature dependency of the lattice parameter of . The dashed lines connect the starting and endpoint of the cooling, and the solid lines are a guide for the eye.

Image of FIG. 3.
FIG. 3.

The temperature dependency of the residual strain of layer of thickness (a) and (b) with and without passivation layer. The dashed lines are a guide for the eye.

Image of FIG. 4.
FIG. 4.

The temperature dependency of the strain relaxation of the 50-nm-thick layer.

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/content/aip/journal/apl/88/10/10.1063/1.2186369
2006-03-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature-dependent strain relaxation of the AlGaN barrier in AlGaN∕GaN heterostructures with and without Si3N4 surface passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186369
10.1063/1.2186369
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