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Band-edge electroluminescence from -implanted bulk
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10.1063/1.2186508
/content/aip/journal/apl/88/10/10.1063/1.2186508
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186508
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) Schematic of a MIS diode formed by implantation into a bulk single-crystal substrate.

Image of FIG. 2.
FIG. 2.

characteristics as a function of postimplant annealing temperature under an ambient for .

Image of FIG. 3.
FIG. 3.

(Color) Room temperature PL from before and after implantation and annealing at for (top) and EL from a MIS diode at room temperature and (bottom).

Image of FIG. 4.
FIG. 4.

(Color) characteristics and forward bias current dependence of integrated EL intensity from an MIS diode annealed at . The EL intensity was measured by a Si photodiode.

Image of FIG. 5.
FIG. 5.

(Color) Optical microscope image of the emission from the diode in the dark (top) and photos of the diode under bias from the probe contact taken both in the light and the dark (bottom).

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/content/aip/journal/apl/88/10/10.1063/1.2186508
2006-03-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band-edge electroluminescence from N+-implanted bulk ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/10/10.1063/1.2186508
10.1063/1.2186508
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