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(Color) Schematic of a MIS diode formed by implantation into a bulk single-crystal substrate.
characteristics as a function of postimplant annealing temperature under an ambient for .
(Color) Room temperature PL from before and after implantation and annealing at for (top) and EL from a MIS diode at room temperature and (bottom).
(Color) characteristics and forward bias current dependence of integrated EL intensity from an MIS diode annealed at . The EL intensity was measured by a Si photodiode.
(Color) Optical microscope image of the emission from the diode in the dark (top) and photos of the diode under bias from the probe contact taken both in the light and the dark (bottom).
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