1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generation
Rent:
Rent this article for
USD
10.1063/1.2180446
/content/aip/journal/apl/88/11/10.1063/1.2180446
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2180446
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Incident light and electric field orientation relative to the photodiode junction plane. (b) Normal incidence requires tensor elements that are necessarily zero in silicon and yields no EFISHG. (c) -polarized light can be coupled to the EFISHG field by both nonzero elements of the third-order susceptibility tensor. (d) -polarized light is only coupled to the EFISHG field by the weaker off-diagonal tensor component.

Image of FIG. 2.
FIG. 2.

CMOS integrated circuit containing planar photodiode structures in shallow and deep diffusion geometries and EFISHG probing location (arrow).

Image of FIG. 3.
FIG. 3.

(a) Unprocessed EFISHG signal for bias voltages from . The leftmost box shows data obtained at bias and subsequent boxes correspond, left to right, to constant bias voltages incremented in steps. A background signal obtained with the laser blocked has been removed. (b) Averaged EFISHG signals shown with a quadratic fit. (c) Current-voltage characteristic measured under reverse bias conditions.

Image of FIG. 4.
FIG. 4.

Composite oscilloscope image showing the EFISHG signal obtained in real-time using an infrared-sensitive photomultiplier tube. The top signal shows the switching waveform used to modulate the applied dc bias. The lower signals are dynamic averages over 512 traces and show the EFISHG signal for reverse biases of and .

Loading

Article metrics loading...

/content/aip/journal/apl/88/11/10.1063/1.2180446
2006-03-17
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2180446
10.1063/1.2180446
SEARCH_EXPAND_ITEM