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Effects of humidity on unencapsulated poly(thiophene) thin-film transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Linear regime transfer characteristics of a PQT-12 TFT under dry nitrogen (solid line) using continuous gate measurements, 45% RH in nitrogen (dots) using pulsed gate voltages, and using continuous application of the gate voltage (triangles). The source-drain voltage was . (b) Log-scale plot of transfer characteristic in (a) under dry nitrogen (line) and under 45% RH (triangles).

Image of FIG. 2.
FIG. 2.

Linear regime field-effect mobility as a function of RH in nitrogen measured using pulsed gate voltages with the current measured after the beginning of the gate pulse.

Image of FIG. 3.
FIG. 3.

(a) Current measurement at a fixed gate voltage with respect to time at . Solid—dry nitrogen; squares: 25% RH in nitrogen; dots: 65% RH in nitrogen. (b) Rate constant for bipolaron formation as a function of relative humidity in nitrogen.

Image of FIG. 4.
FIG. 4.

(a) Mass uptake of water into a PQT-12 film on OTS-coated at varying humidity in nitrogen measured using a quartz crystal microbalance (the line is provided as a guide for the eyes and does not represent a fit to the data). (b) Mass uptake of water as a function of time at 30% RH in nitrogen for a film of PQT-12 on bare silicon dioxide.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of humidity on unencapsulated poly(thiophene) thin-film transistors