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Ultrafast recombination in Si-doped
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10.1063/1.2185407
/content/aip/journal/apl/88/11/10.1063/1.2185407
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2185407
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Recorded reflectivity transient for a silicon-doped film. (, .) The reflectivity decay is fitted by a single exponential with . This process is attributed to nonradiative defect-related recombination. The inset shows the reflectivity transient for an undoped film (, ). Two processes are observed therein: carrier cooling within the first and nonradiative recombination at later times.

Image of FIG. 2.
FIG. 2.

Recombination lifetimes vs carrier concentration. Silicon-doped samples show recombination lifetimes lower by an order of magnitude than the undoped counterparts. The carrier concentration was determined by dc Hall measurements.

Image of FIG. 3.
FIG. 3.

The reflectivity change depends linearly on fluence, as expected from intraband carrier absorption. The carrier lifetime does not depend on the fluence, as expected for nonradiative recombination.

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/content/aip/journal/apl/88/11/10.1063/1.2185407
2006-03-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast recombination in Si-doped InN
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2185407
10.1063/1.2185407
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