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Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
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10.1063/1.2185467
/content/aip/journal/apl/88/11/10.1063/1.2185467
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2185467
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bond strength of conventional air wafer bonding, MVWB, and ex situ PAWB after different annealing temperature and time.

Image of FIG. 2.
FIG. 2.

SAM pictures of conventional bonding, MVWB, and ex situ PAWB after different annealing temperature.

Image of FIG. 3.
FIG. 3.

Schematic of two surfaces with the same and , but different PSD.

Image of FIG. 4.
FIG. 4.

(Color online) PSD of wafer surface after different processes.

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/content/aip/journal/apl/88/11/10.1063/1.2185467
2006-03-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2185467
10.1063/1.2185467
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