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Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Typical transistor characteristics measured on a rubrene single-crystal FET with Ni source-drain electrodes (width ; length ). The inset shows a top view of one of the devices used in our investigation (for this device the crystal width is ).

Image of FIG. 2.
FIG. 2.

(a) Scaling of the device resistance for nickel contacted devices as a function of channel length for different values of the gate voltages . The intercept at gives the contact resistance. (b) Similar scaling curve for a gold-contacted FET : it is visible that the deviations from linear scaling are larger in this device as compared to Nickel-contacted devices. In other gold-contacted FETs, the magnitude of the fluctuations was larger than for the sample whose data are shown here. (c) Normalized resistance measured on a Ni-contacted FETs fabricated on the same rubrene crystal . does not depend on because for the channel resistance is negligible with respect to the contact resistance. In all panels, the lines are a guide to the eye.

Image of FIG. 3.
FIG. 3.

Gate voltage dependence of the normalized contact resistance for four of the samples studied (for which the channel width is - open diamonds, - full circles, - open circles and - full squares). The inset shows the gate voltage dependence of the mobility determined from Eq. (3) (full circles) and from scaling using Eq. (2) (open diamonds). The vertical line denotes the beginning of the linear regime. For all the measurements .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes