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Electrical characteristics of bulk -based Schottky rectifiers with ultrafast reverse recovery
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10.1063/1.2186368
/content/aip/journal/apl/88/11/10.1063/1.2186368
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2186368

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the Schottky diode fabricated.

Image of FIG. 2.
FIG. 2.

characteristics of the Schottky diode. (The inset shows high-field forward characteristics.)

Image of FIG. 3.
FIG. 3.

A plot of reverse breakdown characteristics. (The inset shows a plot of breakdown voltage diode diameter.)

Image of FIG. 4.
FIG. 4.

Reverse recovery characteristics.

Tables

Generic image for table
Table I.

Comparison of key properties of vertical and lateral Schottky diodes.

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/content/aip/journal/apl/88/11/10.1063/1.2186368
2006-03-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2186368
10.1063/1.2186368
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