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Metal gate work function engineering using interfacial layers
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10.1063/1.2186517
/content/aip/journal/apl/88/11/10.1063/1.2186517
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2186517
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic showing a cross section of the capacitor device used in this study.

Image of FIG. 2.
FIG. 2.

TEM micrograph showing a cross section of the gate stack. The layer appears amorphous.

Image of FIG. 3.
FIG. 3.

The effect of interfacial layer on TiSiN electrode work function. The -EOT plot is shown for (a) and (b) gate stacks.

Image of FIG. 4.
FIG. 4.

A plot showing well-behaved curves for capacitors with and without interfacial layers (a) and (b) gate stacks.

Image of FIG. 5.
FIG. 5.

Effect of gate dielectric composition on the work function enhancement by an interfacial layer.

Image of FIG. 6.
FIG. 6.

XPS spectra showing the Al and Si energies for as-deposited and annealed . The Al shows a chemical shift corresponding to Al–O bond formation and the Si peak shows evidence of suboxide formation ( reduction).

Image of FIG. 7.
FIG. 7.

XPS spectra showing the Hf energies for (a) as-deposited and (b) annealed samples. The minimal shift in energy indicates has not been reduced by the interfacial layer.

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/content/aip/journal/apl/88/11/10.1063/1.2186517
2006-03-16
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal gate work function engineering using AlNx interfacial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/11/10.1063/1.2186517
10.1063/1.2186517
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