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A schematic showing a cross section of the capacitor device used in this study.
TEM micrograph showing a cross section of the gate stack. The layer appears amorphous.
The effect of interfacial layer on TiSiN electrode work function. The -EOT plot is shown for (a) and (b) gate stacks.
A plot showing well-behaved curves for capacitors with and without interfacial layers (a) and (b) gate stacks.
Effect of gate dielectric composition on the work function enhancement by an interfacial layer.
XPS spectra showing the Al and Si energies for as-deposited and annealed . The Al shows a chemical shift corresponding to Al–O bond formation and the Si peak shows evidence of suboxide formation ( reduction).
XPS spectra showing the Hf energies for (a) as-deposited and (b) annealed samples. The minimal shift in energy indicates has not been reduced by the interfacial layer.
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