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Theory of transfer characteristics of nanotube network transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) A thin-film network transistor with channel length , channel width , and individual tube length . Source , drain , and gate are also indicated. (b) cross section of the TFT transistor in (a) showing field lines for a single tube. (c) Current-voltage plots showing the on-current (, defined at and ) and off-current (, defined at and ) and subthreshold slope () for a network transistor device. (d) Carrier concentration vs gate voltage for different values of interface trap capacitance for a device with oxide thickness (Ref. 6) and oxide capacitance . The interface trap density corresponding to is at , and the subthreshold slope is , respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Computed at for different densities is compared with experimental results (from Ref. 6) before the electrical breakdown of metallic tubes. The number after each curve corresponds to tube density . The curve is shifted on the axis to account for charge trapping.

Image of FIG. 3.
FIG. 3.

(Color online) Dependence of (a) On-off ratio and (b) On-current on network density before and after the removal of metallic tubes. , , and . The network drops below the percolation limit after breakdown for the tube density indicated by arrows.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theory of transfer characteristics of nanotube network transistors