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Fabrication of genuine single-quantum-dot light-emitting diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

FIB-implanted single SAD-LED: (a) layer sequence, (b) top view and (c) schematic band profile for applied forward bias, when hole injection becomes energetically possible. We assume that hole injection starts from the acceptor levels, whereas electron injection should occur preferably from the conduction band edge at the boundary of the to the layer.

Image of FIG. 2.
FIG. 2.

High resolution curve, taken at on our smallest LED, containing a single quantum dot. Several peaks and steps are observed that can be attributed to resonant tunneling of carriers into the confined SAD sublevels. The scale on the right hand side illustrates the time constant being the inverse rate of injected carriers into the SAD .

Image of FIG. 3.
FIG. 3.

EL-spectra of the same device taken at . The SAD emission was collected by a confocal microscope, dispersed by a grating monochromator and detected by an -CCD-camera array, providing a spectral resolution of . EL signal sets in at and with increasing bias up to four well separated shells are observed. Inset: -shell emission taken with an improved spectral resolution of . Several sharp (multi-) excitonic lines are observed. The intensity of the narrow lines showed linear and quadratic dependence on the injection current and could therefore be assigned to the decay of the negatively charged exciton and biexciton, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of genuine single-quantum-dot light-emitting diodes