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Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica
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10.1063/1.2189115
/content/aip/journal/apl/88/12/10.1063/1.2189115
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/12/10.1063/1.2189115
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Figures

Image of FIG. 1.
FIG. 1.

(a) The room temperature Raman spectra of two representative UHV evaporation deposited silicon films, the growth temperatures, , being 138 and , respectively; these spectra are depicted with the solid lines. The room temperature Raman spectra of and [taken from Figs. 1(b) and 3(a) of Li and Lannin (Ref. 16) and Fig. 2 of Sokolov et al. (Ref. 17)] are also depicted, the Li and Lannin (Ref. 16) results being shown with the dashed lines while those of Sokolov et al. (Ref. 17) are shown with the dotted lines. The and results were intensity “calibrated” with respect to our Raman result at the TO peak. The TO, TA, and LA peaks in these Raman spectra are marked with the arrows. (b) The breadth of the TO peak in the Raman spectrum, , plotted as a function of the growth temperature for the 11 UHV evaporation deposited silicon films considered in this analysis. Results corresponding to and are depicted with the dotted lines; these results were obtained by performing a completely analogous analysis with the experimental data from Sokolov et al. (Ref. 17) depicted in Fig. 1(a). (c) The ratio, /, plotted as a function of the growth temperature for the 11 UHV evaporation deposited silicon films considered in this analysis. Results corresponding to and are depicted with the dotted lines; these results were obtained by performing a completely analogous analysis with the experimental data from Sokolov et al. (Ref. 17) depicted in Fig. 1(a)1. There were three samples grown at , and their ratios are virtually indistinguishable.

Image of FIG. 2.
FIG. 2.

The room temperature optical absorption spectra, , of three representative UHV evaporation deposited silicon films, the growth temperatures, , being 138, 335, and , respectively; these spectra are depicted with the open symbols. Representative fits of an exponential function to these optical absorption spectra are depicted with the dotted lines, these fits being determined for the range . The room temperature optical absorption spectrum of a film is also depicted with the open symbols [taken from Fig. 2 of Freeman and Paul (Ref. 19)]. The room temperature optical absorption spectrum of bulk is depicted with the solid symbols [taken from Fig. 4 of Dash and Newman (Ref. 20)].

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/content/aip/journal/apl/88/12/10.1063/1.2189115
2006-03-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/12/10.1063/1.2189115
10.1063/1.2189115
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