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Cross-sectional TEM image of of GaSb on GaAs showing a highly periodic array of misfit dislocations at the GaSb layer and the GaAs substrate.
HR-TEM image of the interface showing a periodic 90° misfit array with a spacing.
AFM images of the growth of GaSb on GaAs after (a) 3 ML deposition and (b) 9 ML deposition, showing formation of islands that are elongated along the [1–10] direction.
Cross-sectional TEM image of a GaSb island on GaAs resulting from 9 ML deposition of GaSb with strain relieving misfit dislocations that can be observed at the interface.
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