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Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition
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10.1063/1.2187494
/content/aip/journal/apl/88/13/10.1063/1.2187494
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2187494

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the OFET geometry (channel width ; channel length ).

Image of FIG. 2.
FIG. 2.

(Color online) AFM micrographs of pentacene films, SuMBE grown at three kinetic energies. (a) , film thickness ; (b) , film thickness ; and (c) , film thickness . In each figure, the inset shows the height profile along the lines drawn on the micrographs, selected as broken curve paths to give information about both the typical morphology of the grains and the peak-to-peak variation.

Image of FIG. 3.
FIG. 3.

OFETs output characteristics for SuMBE grown films at three : (a) ; (b) ; and (c) . For all devices, and .

Image of FIG. 4.
FIG. 4.

Field-effect mobility as a function of temperature. ● polycrystalline film grown by SuMBE at lower than . ∎ films grown at kinetic energy higher than .

Tables

Generic image for table
Table I.

Characteristic parameters of the devices as a function of .

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/content/aip/journal/apl/88/13/10.1063/1.2187494
2006-03-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2187494
10.1063/1.2187494
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