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Photonic crystal laser lift-off GaN light-emitting diodes
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/content/aip/journal/apl/88/13/10.1063/1.2189159
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/content/aip/journal/apl/88/13/10.1063/1.2189159
2006-03-31
2014-12-26

Abstract

We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes, thinned down to the microcavity regime, incorporating two-dimensional photonic crystal diffraction gratings. Angle-resolved measurements reveal the photonic behavior of the devices, which strongly depends on the GaN thickness. Data point out the detrimental role of metal absorption. We explore theoretically the possibility to limit this loss channel.

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Scitation: Photonic crystal laser lift-off GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189159
10.1063/1.2189159
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