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Photonic crystal laser lift-off GaN light-emitting diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Sketch of the devices. The arrows represent current flow (with current spreading in the region). (b) Microscope image of a device (c). Atomic force microscope image of a PhC region.

Image of FIG. 2.
FIG. 2.

(Color) Angle-resolved spectra of two devices: (a) device 1, thick and (b) device 2, thick. There is a slight shift in wavelength between both devices.

Image of FIG. 3.
FIG. 3.

(Color) Band structures corresponding to the spectra of Fig. 2: (a) device 1 and (b) device 2. Calculated band structures are superimposed (the radius of the points being proportional to the ratio of power emitted to air).

Image of FIG. 4.
FIG. 4.

Power flows of the fundamental Bloch mode. Thin: ; thick: ; Dashed: (, incoming power of the Bloch mode; , power radiated to air; , power absorbed in the mirror; and , power reflected backwards). (a), (b), and (c), respectively, correspond to the following structures: thin layer, thick layer, and thick layer and Ag mirror. For the mode is under the light cone and . For the mode reaches the edge of the Brillouin zone and undergoes minigaps and anticrossing with other modes.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photonic crystal laser lift-off GaN light-emitting diodes