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Illustration of a shutter sequence for the growth of 3 ML thick migration-enhanced molecular-beam epitaxial InAs QDs (#MEE), and 2.4 ML thick conventional molecular-beam epitaxial InAs QDs (#CON). In the case of #CON, a long annealing was carried out with arsenic.
(Color online) areal images of (a) #MEE and (b) #CON taken by AFM.
Cross-sectional TEM images of (a) #MEE and (b) #CON. WLs are marked with arrows. The thickness of the WL of #MEE is 47.5% thinner than that of #CON .
(Color online) The dependence of the PL peak energies (box) and the PL peak linewidths (circle) of #MEE and #CON, as a function of cryostat temperature.
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