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Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy
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10.1063/1.2189195
/content/aip/journal/apl/88/13/10.1063/1.2189195
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189195
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Figures

Image of FIG. 1.
FIG. 1.

Illustration of a shutter sequence for the growth of 3 ML thick migration-enhanced molecular-beam epitaxial InAs QDs (#MEE), and 2.4 ML thick conventional molecular-beam epitaxial InAs QDs (#CON). In the case of #CON, a long annealing was carried out with arsenic.

Image of FIG. 2.
FIG. 2.

(Color online) areal images of (a) #MEE and (b) #CON taken by AFM.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of (a) #MEE and (b) #CON. WLs are marked with arrows. The thickness of the WL of #MEE is 47.5% thinner than that of #CON .

Image of FIG. 4.
FIG. 4.

(Color online) The dependence of the PL peak energies (box) and the PL peak linewidths (circle) of #MEE and #CON, as a function of cryostat temperature.

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/content/aip/journal/apl/88/13/10.1063/1.2189195
2006-03-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189195
10.1063/1.2189195
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