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Investigations on electroresistance effect in epitaxial manganite films using field effect configurations
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10.1063/1.2189197
/content/aip/journal/apl/88/13/10.1063/1.2189197
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189197
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction spectra for the and epitaxial thin films grown on the substrates. The inset shows the top view of the device geometry.

Image of FIG. 2.
FIG. 2.

Temperature dependent resistance of the channel for the field bias ranging from . The inset shows the channel resistance as a function of the gate voltage measured at .

Image of FIG. 3.
FIG. 3.

Temperature dependent resistance of the channel under the field bias of .

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/content/aip/journal/apl/88/13/10.1063/1.2189197
2006-03-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigations on electroresistance effect in epitaxial manganite films using field effect configurations
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189197
10.1063/1.2189197
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