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Subnanometer-equivalent-oxide-thickness germanium -metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-/metal gate stack
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10.1063/1.2189456
/content/aip/journal/apl/88/13/10.1063/1.2189456
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189456
/content/aip/journal/apl/88/13/10.1063/1.2189456
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/content/aip/journal/apl/88/13/10.1063/1.2189456
2006-03-28
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189456
10.1063/1.2189456
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