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Typical as-measured characteristics for Ge -MOSFETs. The current was measured at the source to eliminate drain junction leakage. The devices exhibited a threshold voltage and subthreshold swing.
Typical as-measured characteristics for Ge -MOSFETs.
Typical as-measured split characteristics for Ge -MOSFETs. The maximum inversion capacitance corresponds to a CET of and EOT of after quantum mechanical correction.
Typical as-measured gate leakage for -MOSFETs with a gate area of and capacitors with an area of . At , the gate leakage for both is less than . The EOT for these devices is .
Comparison of extracted hole mobility for Ge and Si control -MOSFETs. The Ge devices show enhancement compared to Si controls and match the universal curve.
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