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Subnanometer-equivalent-oxide-thickness germanium -metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-/metal gate stack
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10.1063/1.2189456
/content/aip/journal/apl/88/13/10.1063/1.2189456
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189456
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical as-measured characteristics for Ge -MOSFETs. The current was measured at the source to eliminate drain junction leakage. The devices exhibited a threshold voltage and subthreshold swing.

Image of FIG. 2.
FIG. 2.

Typical as-measured characteristics for Ge -MOSFETs.

Image of FIG. 3.
FIG. 3.

Typical as-measured split characteristics for Ge -MOSFETs. The maximum inversion capacitance corresponds to a CET of and EOT of after quantum mechanical correction.

Image of FIG. 4.
FIG. 4.

Typical as-measured gate leakage for -MOSFETs with a gate area of and capacitors with an area of . At , the gate leakage for both is less than . The EOT for these devices is .

Image of FIG. 5.
FIG. 5.

Comparison of extracted hole mobility for Ge and Si control -MOSFETs. The Ge devices show enhancement compared to Si controls and match the universal curve.

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/content/aip/journal/apl/88/13/10.1063/1.2189456
2006-03-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189456
10.1063/1.2189456
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