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Molecular beam epitaxy growth of metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing
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10.1063/1.2189607
/content/aip/journal/apl/88/13/10.1063/1.2189607
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189607
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Figures

Image of FIG. 1.
FIG. 1.

Epitaxial layer structure of the MHEMT grown on employing a compositionally graded M-buffer.

Image of FIG. 2.
FIG. 2.

Triple-axis (004) contour maps of the MHEMT structures; (a) without in situ RTA and (b) with in situ RTA at for .

Image of FIG. 3.
FIG. 3.

Room-temperature PL spectra of the channel MHEMT without the in situ RTA and with the in situ RTA at for and the -based channel -HEMT. The inset shows the room-temperature PL spectra of the MHEMT structures with and without the postgrowth annealing.

Image of FIG. 4.
FIG. 4.

(Color online) Effects of in situ and postgrowth RTA on transport properties of MHEMTs and -HEMTs grown on : (a) room-temperature carrier concentration vs annealing temperature and (b) Hall mobility vs annealing temperature. The data M2 represent room-temperature carrier concentration and Hall mobility of the MHEMT without in situ RTA.

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/content/aip/journal/apl/88/13/10.1063/1.2189607
2006-03-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189607
10.1063/1.2189607
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