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Epitaxial layer structure of the MHEMT grown on employing a compositionally graded M-buffer.
Triple-axis (004) contour maps of the MHEMT structures; (a) without in situ RTA and (b) with in situ RTA at for .
Room-temperature PL spectra of the channel MHEMT without the in situ RTA and with the in situ RTA at for and the -based channel -HEMT. The inset shows the room-temperature PL spectra of the MHEMT structures with and without the postgrowth annealing.
(Color online) Effects of in situ and postgrowth RTA on transport properties of MHEMTs and -HEMTs grown on : (a) room-temperature carrier concentration vs annealing temperature and (b) Hall mobility vs annealing temperature. The data M2 represent room-temperature carrier concentration and Hall mobility of the MHEMT without in situ RTA.
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