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Molecular beam epitaxy growth of metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing
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10.1063/1.2189607
/content/aip/journal/apl/88/13/10.1063/1.2189607
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189607
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/content/aip/journal/apl/88/13/10.1063/1.2189607
2006-03-28
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189607
10.1063/1.2189607
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