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The simulated CNT SBFET under infrared light illumination. The electric field is polarized along the CNT channel. The intrinsic channel has a length of . The bottom oxide thickness is .
(Color online) (a) vs characteristics without light illumination (the solid line) and with three different illumination power densities, (the dashed line), (the dotted line), and (the dash-dotted line). (b) The energy and position resolved current spectrum on a grayscale plot at . A brighter color represents a larger value. The illumination power density is and photon energy . The first conduction and valence subband profiles are also shown. The channel is a (17,0) CNT, which results in a diameter of and a band gap of . is the source (drain) Fermi level.
(Color online) The source-drain current versus the photon energy for a (22,0) CNT with (the solid line), a (17,0) CNT with (the dashed line), and a (13,0) CNT with (the dash-dotted line) under the illumination intensity of at in the presence of electron-phonon coupling. For comparison, the dotted line with crosses shows the current of the (17,0) CNT without electron-phonon coupling. The vertical bars show the subband gaps.
(Color online) The LDOS as a function of the energy and channel position on a grayscale plot (a) without electron-phonon coupling and (b) with electron-phonon coupling under the illumination intensity of at . The channel is a (17,0) CNT.
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