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Influence of annealing temperature on the band structure of sol-gel thin films on -type Si(100)
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10.1063/1.2189828
/content/aip/journal/apl/88/13/10.1063/1.2189828
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189828

Figures

Image of FIG. 1.
FIG. 1.

versus photon energy for BST thin films annealed at different temperatures.

Image of FIG. 2.
FIG. 2.

XPS spectra of core level (a) and the valence band (b) obtained from the BST thin films annealed at different temperatures.

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) and (b) obtained from the BST thin films annealed at different temperatures.

Image of FIG. 4.
FIG. 4.

(a) and frequency (b) characteristics obtained from BST thin films annealed at 600, 700, and .

Tables

Generic image for table
Table I.

Summary of the measured band gap energy, shift value of the Fermi level , the VBM , the CBM , and the ratio of BST thin films annealed at different temperatures.

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/content/aip/journal/apl/88/13/10.1063/1.2189828
2006-03-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of annealing temperature on the band structure of sol-gel Ba0.65Sr0.35TiO3 thin films on n-type Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189828
10.1063/1.2189828
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