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Molecular beam epitaxy of on -plane GaN
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10.1063/1.2189832
/content/aip/journal/apl/88/13/10.1063/1.2189832
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189832
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns observed along the GaN buffer layer azimuths (a) and (b) , YMO with Y-rich surface along the same GaN azimuths (c) and (d) , and Mn-rich surface again along the same GaN azimuths (e) and (f) . (g) Variation of the RHEED specular spot intensity during YMO growth.

Image of FIG. 2.
FIG. 2.

XRD scans of a GaN buffer layer (bottom) and a YMO film on GaN buffer layer (top). The main substrate peaks and the YMO peaks are indicated. Inset: -scan of the YMO film on GaN buffer layer. Bottom scan corresponds to the GaN peak and the top scan corresponds to the YMO peak.

Image of FIG. 3.
FIG. 3.

Polarization as a function of electric field for a thick YMO film on a GaN buffer layer.

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/content/aip/journal/apl/88/13/10.1063/1.2189832
2006-03-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy of YMnO3 on c-plane GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2189832
10.1063/1.2189832
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