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Transport properties of low angle grain boundaries in films at high magnetic fields
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Image of FIG. 1.
FIG. 1.

Current density-voltage characteristics of a film grown on a bicrystal with an 8° [001]-tilt grain boundary. The characteristics were measured at 4.2 and at in a magnetic field of (zero field cooled) applied in the boundary plane, parallel to the axis of the film.

Image of FIG. 2.
FIG. 2.

Critical current density measured for several doped films grown on bicrystals with 8° [001]-tilt grain boundaries as a function of temperature. The data were taken at (zero field cooled), with the field being applied parallel to the axis.

Image of FIG. 3.
FIG. 3.

Critical current density measured as a function of temperature for several doped films with 8° [001]-tilt boundaries. The data were taken at , zero field cooled (zfc) and field cooled (fc).

Image of FIG. 4.
FIG. 4.

Critical current density measured at and as a function of the number of holes per planar copper in films (intragrain measurements).


Generic image for table
Table I.

Critical current densities of and films at 0 and measured at (zero field cooled). For some misorientation angles several bridges were measured on a chip. In this case the data of a characteristic bridge are given.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of low angle grain boundaries in Y1−xCaxBa2Cu3O7−δ films at high magnetic fields