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Current density-voltage characteristics of a film grown on a bicrystal with an 8° -tilt grain boundary. The characteristics were measured at 4.2 and at in a magnetic field of (zero field cooled) applied in the boundary plane, parallel to the axis of the film.
Critical current density measured for several doped films grown on bicrystals with 8° -tilt grain boundaries as a function of temperature. The data were taken at (zero field cooled), with the field being applied parallel to the axis.
Critical current density measured as a function of temperature for several doped films with 8° -tilt boundaries. The data were taken at , zero field cooled (zfc) and field cooled (fc).
Critical current density measured at and as a function of the number of holes per planar copper in films (intragrain measurements).
Critical current densities of and films at 0 and measured at (zero field cooled). For some misorientation angles several bridges were measured on a chip. In this case the data of a characteristic bridge are given.
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