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Dopant profile engineering by near-infrared femtosecond laser activation
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10.1063/1.2191095
/content/aip/journal/apl/88/13/10.1063/1.2191095
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191095

Figures

Image of FIG. 1.
FIG. 1.

(Color online) SIMS profiles of as-implanted B-doped samples with (sample A) and without PAI (sample B) as well as -implanted samples (sample C). SIMS profiles for all B-doped layers activated by FLA at different substrate temperatures are also shown.

Image of FIG. 2.
FIG. 2.

(Color online) SIMS profiles for -implanted layers activated by either FLA or ELA at different substrate temperatures. SRP profiles for -implanted layers activated by FLA at different temperature are also shown.

Image of FIG. 3.
FIG. 3.

(Color online) SIMS and SRP profiles for P-implanted layers activated by FLA at different substrate temperatures. SIMS profiles for P-implanted layers activated by ELA at different substrate temperatures are also shown. The dopant depth was designed to be the same as for -implanted samples.

Tables

Generic image for table
Table I.

Implantation parameters and FLA-activation and ELA-activation conditions for three B-doped and P-doped layers. Sheet resistances for doped layers activated by FLA with those activated by ELA methods in this work and reported in Refs. 4 and 5 are listed for comparison. Dopant depth is defined as the distance from the surface at which the dopant concentrations drop to .

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2006-03-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dopant profile engineering by near-infrared femtosecond laser activation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191095
10.1063/1.2191095
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