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Effects of Ag/indium tin oxide contact to a SiC doping layer on performance of Si nanocrystal light-emitting diodes
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10.1063/1.2191409
/content/aip/journal/apl/88/13/10.1063/1.2191409
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191409
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram of the nc-Si LED structure investigated in this work.

Image of FIG. 2.
FIG. 2.

Typical current-voltage curves of nc-Si LEDs with and without a Ag interlayer between the ITO and SiC layers measured at room temperature.

Image of FIG. 3.
FIG. 3.

Typical characteristics of the Ag and single ITO contacts to a SiC doping layer, respectively, measured between the TLM pads with spacing of .

Image of FIG. 4.
FIG. 4.

Light output powers of two nc-Si LEDs as a function of current density, measured from the topside of the nc-Si LED wafer chips.

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/content/aip/journal/apl/88/13/10.1063/1.2191409
2006-03-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Ag/indium tin oxide contact to a SiC doping layer on performance of Si nanocrystal light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191409
10.1063/1.2191409
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