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A schematic diagram of the nc-Si LED structure investigated in this work.
Typical current-voltage curves of nc-Si LEDs with and without a Ag interlayer between the ITO and SiC layers measured at room temperature.
Typical characteristics of the Ag and single ITO contacts to a SiC doping layer, respectively, measured between the TLM pads with spacing of .
Light output powers of two nc-Si LEDs as a function of current density, measured from the topside of the nc-Si LED wafer chips.
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