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(a) Cell size and interpore distance of the hexagonally close-packed nanoporous alumina mask as functions of the anodizing voltage in sulfuric and oxalic acid electrolyte solutions. The linear-regression-fitted line has a slope of . (b) Thickness of the porous alumina layer grown anodically as a function of the anodizing time at the anodization voltages of (●) in oxalic acid and (▴) in sulfuric acid solutions. The growth rates are 2.9 and , respectively.
SEM images of a plane view of the alumina nanoporous alumina masks fabricated (a) at and (b) at in a oxalic acid solution and (c) at in a sulfuric acid solution.
AFM images of the CdTe nanodot arrays grown by MBE with nanoporous alumina masks on a GaAs substrate: (a) dot size using the alumina mask fabricated at in oxalic acid, (b) dot size using the alumina mask fabricated at in oxalic acid, and (c) dot size using the alumina mask fabricated at in sulfuric acid.
(a) Cross-sectional view of the nanoporous alumina mask fabricated at in sulfuric acid. (b) An AFM image and the cross-sectional analysis of the CdTe nanodot arrays grown on the GaAs substrate by using the alumina mask fabricated at in sulfuric acid.
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