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Long-range-ordered nanodot arrays grown as replicas of nanoporous alumina masks
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10.1063/1.2191424
/content/aip/journal/apl/88/13/10.1063/1.2191424
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191424
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cell size and interpore distance of the hexagonally close-packed nanoporous alumina mask as functions of the anodizing voltage in sulfuric and oxalic acid electrolyte solutions. The linear-regression-fitted line has a slope of . (b) Thickness of the porous alumina layer grown anodically as a function of the anodizing time at the anodization voltages of (●) in oxalic acid and (▴) in sulfuric acid solutions. The growth rates are 2.9 and , respectively.

Image of FIG. 2.
FIG. 2.

SEM images of a plane view of the alumina nanoporous alumina masks fabricated (a) at and (b) at in a oxalic acid solution and (c) at in a sulfuric acid solution.

Image of FIG. 3.
FIG. 3.

AFM images of the CdTe nanodot arrays grown by MBE with nanoporous alumina masks on a GaAs substrate: (a) dot size using the alumina mask fabricated at in oxalic acid, (b) dot size using the alumina mask fabricated at in oxalic acid, and (c) dot size using the alumina mask fabricated at in sulfuric acid.

Image of FIG. 4.
FIG. 4.

(a) Cross-sectional view of the nanoporous alumina mask fabricated at in sulfuric acid. (b) An AFM image and the cross-sectional analysis of the CdTe nanodot arrays grown on the GaAs substrate by using the alumina mask fabricated at in sulfuric acid.

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/content/aip/journal/apl/88/13/10.1063/1.2191424
2006-03-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Long-range-ordered CdTe∕GaAs nanodot arrays grown as replicas of nanoporous alumina masks
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191424
10.1063/1.2191424
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