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Stability of strained H:Si(105) and H:Ge(105) surfaces
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10.1063/1.2191735
/content/aip/journal/apl/88/13/10.1063/1.2191735
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191735

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Monohydride (105) reconstructions with two different densities of hydrogenated bonds , (SR, DT) and (SU, DU), where is the bulk lattice constant of Si or Ge. The hydrogen atoms are shown as smaller white spheres.

Image of FIG. 2.
FIG. 2.

(Color online) Surface energies (in ) of clean [(a) and (b)] and monohydride [(c) and (d)] Si and Ge surfaces plotted vs biaxial strain (in %). (c) and (d) show surface energy curves for two values of the H chemical potential. The energies of double-step structures are plotted as dashed (DT) or dotted lines (DU). The crossing between SR and (001) curves [present in (a) and (b)] largely disappears when the surfaces are monohydride passivated [(c) and (d)].

Tables

Generic image for table
Table I.

Surface energy ratios for monohydride reconstructions at and , compared to the ratios of densities of H-passivated bonds.

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/content/aip/journal/apl/88/13/10.1063/1.2191735
2006-03-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stability of strained H:Si(105) and H:Ge(105) surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191735
10.1063/1.2191735
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