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Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
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10.1063/1.2191736
/content/aip/journal/apl/88/13/10.1063/1.2191736
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191736

Figures

Image of FIG. 1.
FIG. 1.

(a) IPE/PC quantum yield as a function of photon energy measured on (100)Ge MOS capacitors with -thick (circles), -thick (squares) insulators, and a sample (triangles). Open and closed symbols correspond to positive and negative biases on the evaporated Au electrode, respectively, with the average strength of electric field in the oxide of . The insert indicates the interface band diagram and the threshold energies of optical electron transitions observed. Panel (b) and the insert illustrate the determination of the spectral thresholds from the power plots of the quantum yield vs photon energy. The arrows indicate the derived spectral threshold energies. Lines guide the eye.

Image of FIG. 2.
FIG. 2.

IPE quantum yield as a function of photon energy in (100)Ge MOS capacitors with -thick (circles), -thick (squares), and -thick (triangles) insulators measured at metal bias. Open and closed symbols correspond to samples with Al and Au electrodes on top, respectively. The insert illustrates the determination of the spectral thresholds from the Fowler plot of the quantum yield vs photon energy. The lines guide the eye.

Image of FIG. 3.
FIG. 3.

PC quantum yield as a function of photon energy as measured on (100)Ge MOS capacitors with a -thick insulator and Al (엯) or Au (●,∎) metal electrodes at (circles) or (∎) bias on the metal electrode. The insert illustrates the determination of the spectral thresholds from the plot of the quantum yield vs photon energy. The lines guide the eye.

Tables

Generic image for table
Table I.

Energy band diagram parameters of interfaces between (100)Si, (100)Ge, and deposited metal oxides.

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/content/aip/journal/apl/88/13/10.1063/1.2191736
2006-03-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2191736
10.1063/1.2191736
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