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Analytical model for incomplete signal generation in semiconductor detectors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Pulse-height spectra obtained from a source using the detector having a dimension of for various shaping times of the linear amplifier. The applied bias to the detector was fixed at . Relative energy resolutions for photon peak are indicated in the graphs.

Image of FIG. 2.
FIG. 2.

(Color online) Schematics depicting charge generation in a semiconductor detector with a parallel plate geometry. Transport directions of the generated charge carriers are indicated for two different configurations: (a) negatively biased radiation-receiving electrode and (b) positively biased radiation-receiving electrode. Boundary positions of the charge carriers that never reach the corresponding electrode for a given charge collection time are indicated.

Image of FIG. 3.
FIG. 3.

(Color online) Charge collection efficiencies of the detector for photons. Circles are the experimental measurements and solid lines are the calculation results. Charge collection efficiencies as a function of the applied bias and the collection time are, respectively, shown in the upper and lower panels. Calculation with and provides the best match with the two separate measurements.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analytical model for incomplete signal generation in semiconductor detectors