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(Color online) Pulse-height spectra obtained from a source using the detector having a dimension of for various shaping times of the linear amplifier. The applied bias to the detector was fixed at . Relative energy resolutions for photon peak are indicated in the graphs.
(Color online) Schematics depicting charge generation in a semiconductor detector with a parallel plate geometry. Transport directions of the generated charge carriers are indicated for two different configurations: (a) negatively biased radiation-receiving electrode and (b) positively biased radiation-receiving electrode. Boundary positions of the charge carriers that never reach the corresponding electrode for a given charge collection time are indicated.
(Color online) Charge collection efficiencies of the detector for photons. Circles are the experimental measurements and solid lines are the calculation results. Charge collection efficiencies as a function of the applied bias and the collection time are, respectively, shown in the upper and lower panels. Calculation with and provides the best match with the two separate measurements.
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