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Control of - and -type conductivities in P doped ZnO thin films by using radio-frequency sputtering
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10.1063/1.2192089
/content/aip/journal/apl/88/13/10.1063/1.2192089
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2192089
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Figures

Image of FIG. 1.
FIG. 1.

Effect of oxygen concentration on the electrical properties as well as conduction type of P doped ZnO thin films. Here, is the carrier concentration, is the resistivity, and is the Hall mobility.

Image of FIG. 2.
FIG. 2.

characteristics of a ZnO diode formed by a ZnO:P layer and -type Si substrate. The liner a characteristics on the ZnO:P thin film and Si substrate measured with two indium electrodes on the surface prove that the Ohmic contacts exist between electrode and thin film or substrate. The thickness of thin film is .

Image of FIG. 3.
FIG. 3.

XRD patterns of ZnO:P thin film deposited on the glass substrate. The sample was grown at the oxygen concentration of 5%.

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/content/aip/journal/apl/88/13/10.1063/1.2192089
2006-03-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/13/10.1063/1.2192089
10.1063/1.2192089
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