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Effect of oxygen concentration on the electrical properties as well as conduction type of P doped ZnO thin films. Here, is the carrier concentration, is the resistivity, and is the Hall mobility.
characteristics of a ZnO diode formed by a ZnO:P layer and -type Si substrate. The liner a characteristics on the ZnO:P thin film and Si substrate measured with two indium electrodes on the surface prove that the Ohmic contacts exist between electrode and thin film or substrate. The thickness of thin film is .
XRD patterns of ZnO:P thin film deposited on the glass substrate. The sample was grown at the oxygen concentration of 5%.
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