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Photoreflectance investigation of InAs quantum dashes embedded in quantum well grown on InP substrate
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10.1063/1.2187496
/content/aip/journal/apl/88/14/10.1063/1.2187496
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2187496
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Figures

Image of FIG. 1.
FIG. 1.

Experimental and theoretical results: (a) Room-temperature PL spectrum; (b) room-temperature PR spectrum (thin solid line), Lorentzian line shape with fit (thick dotted line) and moduli of PR resonances (dashed lines); dotted vertical lines indicate the energies of optical transitions obtained from fit; (c) calculated energies of optical transitions for QW (solid curves) and QW (dashed curves) in a function of the conduction band offset; the dashed curves have been obtained at for interface and various for interface.

Image of FIG. 2.
FIG. 2.

The band structure of investigated system, heavy holes and light holes in the top and bottom part, respectively.

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/content/aip/journal/apl/88/14/10.1063/1.2187496
2006-04-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well grown on InP substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2187496
10.1063/1.2187496
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