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Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)
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10.1063/1.2189114
/content/aip/journal/apl/88/14/10.1063/1.2189114
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2189114
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the nanopore arrays on a Si(111) surface; (b) cross-sectional SEM image of NHE GaN on nanoporous Si(111) showing air bridges at the interface; and (c) low-magnification SEM image of NHE GaN showing truncated pyramids during an intermediate growth stage.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of overgrown GaN. (a) Low-magnification bright-field cross-sectional TEM image, (b) bright-field image showing the interface of overgrown GaN and nanoporous Si, (c) weak-beam dark-field TEM image for , and (d) weak-beam dark-field TEM image for . TEM images (c) and (d) are taken from the area marked with dashed lines in image (a).

Image of FIG. 3.
FIG. 3.

Micro-Raman spectra recorded from the flat surface of the coalesced NHE GaN and GaN grown on a planar Si substrate. The inset shows the room-temperature band-edge PL spectra of these samples.

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/content/aip/journal/apl/88/14/10.1063/1.2189114
2006-04-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2189114
10.1063/1.2189114
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