Full text loading...
(a) SEM image of the nanopore arrays on a Si(111) surface; (b) cross-sectional SEM image of NHE GaN on nanoporous Si(111) showing air bridges at the interface; and (c) low-magnification SEM image of NHE GaN showing truncated pyramids during an intermediate growth stage.
Cross-sectional TEM images of overgrown GaN. (a) Low-magnification bright-field cross-sectional TEM image, (b) bright-field image showing the interface of overgrown GaN and nanoporous Si, (c) weak-beam dark-field TEM image for , and (d) weak-beam dark-field TEM image for . TEM images (c) and (d) are taken from the area marked with dashed lines in image (a).
Micro-Raman spectra recorded from the flat surface of the coalesced NHE GaN and GaN grown on a planar Si substrate. The inset shows the room-temperature band-edge PL spectra of these samples.
Article metrics loading...