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Formation of the physical vapor deposited interface in highly efficient thin film solar cells
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10.1063/1.2190768
/content/aip/journal/apl/88/14/10.1063/1.2190768
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2190768

Figures

Image of FIG. 1.
FIG. 1.

External QE of the solar cells in Table I. Active area currents are calculated from the respective QE curves.

Image of FIG. 2.
FIG. 2.

Work function values determined in the dark and under illumination from the histograms of the respective KPFM images.

Image of FIG. 3.
FIG. 3.

(Color online) UHV-KPFM images of the (a) topography and simultaneously measured (b) work function under illumination of a freshly Se-decapped CIGSe absorber covered with PVD CdS.

Image of FIG. 4.
FIG. 4.

Diode ideality factors vs temperature and Arrhenius plots of the saturation current densities corrected by of the solar cells A and B in Table I.

Tables

Generic image for table
Table I.

Photovoltaic parameters under AM1.5 conditions and activation energies of charge carrier recombination of the solar cell devices. No antireflection coating is used.

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/content/aip/journal/apl/88/14/10.1063/1.2190768
2006-04-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of the physical vapor deposited CdS∕Cu(In,Ga)Se2 interface in highly efficient thin film solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2190768
10.1063/1.2190768
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