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(Color online) (a) Self-consistent calculation of the band structure for sample V198 aligned on the transition for an applied electric field of . The dashed line highlights the doped region. (b) Band structure for sample V198 aligned on the transition for an applied electric field of . The layer sequence, starting from the injection barrier is (in nm) . The figures in boldface represent the barriers and the underlined layers are doped with Si, in density. This doping level yields a sheet carrier density .
(Color online) Color plot of the logarithm of laser emission as a function of injected current and magnetic field for sample V198. In the region with the sample is lasing on the transition . Starting from and with laser emission is relative to the transition . The quenching of laser emission for the shorter wavelength around is due to the resonance (Ref. 16). The measurements are performed at .
(Color online) curves and spectral emission for sample V198 at . Note the two signatures of band misalignement in the curve (vertical black arrows). Inset: laser spectrum at and .
(Color online) (a): curves and spectral emission for sample V198 at . Laser action takes place first starting at with the emission centered around , then after rollover carriers are injected in state ∣4⟩ and the new emission wavelength is centered around . (b): Spectral emission corresponding to the two curves of panel (a).
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