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Analysis of graphene nanoribbons as a channel material for field-effect transistors
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10.1063/1.2191420
/content/aip/journal/apl/88/14/10.1063/1.2191420
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191420
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The size dependence of the energy gap of CNRs and CNTs is shown. The size of the CNR is simply the ribbon width, whereas for the CNT it is the circumference of the tube. At matched width, CNRs have significantly smaller band gaps.

Image of FIG. 2.
FIG. 2.

(Color online) The phonon dispersion relations for a (4,0) CNT (left) and (4,0) CNR (right) are shown in the first Brillouin zone. The lowest energy modes are similar; degeneracy lifting and energy reduction are evident for the higher modes.

Image of FIG. 3.
FIG. 3.

(Color online) The lowest two phonon modes of the (4,0) CNR are shown. Arrows represent in-plane displacements, the discs represent out-of-plane displacements. Solid discs are displacements out of the paper and open discs displacements into the paper. The size of the discs and length of the arrows indicate relative magnitude.

Image of FIG. 4.
FIG. 4.

(Color online) The third and fourth phonon modes of the (4,0) CNR. Note that the fourth (out-of-plane) mode clearly has nonperiodic boundary conditions, not possible in the CNT.

Image of FIG. 5.
FIG. 5.

Comparison of CNR and CNT mobilities at matched band gap. Due to the reduced CNR band gap, CNTs have considerably higher mobilities at matched band gap. Phonon limited electron mobility in silicon under strong inversion is also shown.

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/content/aip/journal/apl/88/14/10.1063/1.2191420
2006-04-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of graphene nanoribbons as a channel material for field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191420
10.1063/1.2191420
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