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Room-temperature terahertz emission from nanometer field-effect transistors
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10.1063/1.2191421
/content/aip/journal/apl/88/14/10.1063/1.2191421
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191421
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics and emission intensities for -HEMT at , (a) and , (b).

Image of FIG. 2.
FIG. 2.

Current-voltage characteristic and the emission intensity for two -HEMTs at room temperature. (a)—sample 1, ; (b)—sample 2, . Note that the maximum emission intensity in sample 2 is times higher than in sample 1.

Image of FIG. 3.
FIG. 3.

(a) Normalized emission spectra at for -HEMT ( and ) and for -HEMT (sample 1, and ). (b) Emission spectra at for -HEMT (sample 2) at , , and .

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/content/aip/journal/apl/88/14/10.1063/1.2191421
2006-04-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature terahertz emission from nanometer field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191421
10.1063/1.2191421
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