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Collector characteristics of (A) a (QW)/GaAs heterojunction bipolar transistor (HBT) laser with decreased gain in the stimulated emission regions (2) and (3) compared with (B) (bottom) ordinary transistor operation with cavity spoiled [region (1), spontaneous recombination, ].
Recombination radiation spectra (spontaneous and stimulated) of the transistor laser (A) of Fig. 1 at the base current bias points (a) 25, (b) 35 , (c) 44, and (d) .
Gain values of the transistor laser (A) of Fig. 1 shown in comparison to ordinary (B) transistor operation at the same bias values as (a), (b), (c), and (d) shown in Fig. 2.
(Color) Overlay of the collector characteristics of the transistor laser (A) of Fig. 1 on those of the same device operating as an ordinary transistor (B) (cavity spoiled by scattering at one mirror). A further region (, indicated in blue and red, suppressed to reduce clutter) shows, by the (A)-(B) overlay comparison, the stimulated recombination distortion in characteristics beyond regions (2) and (3) of Fig. 1 (yellow and green above).
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