1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser
Rent:
Rent this article for
USD
10.1063/1.2191448
/content/aip/journal/apl/88/14/10.1063/1.2191448
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191448
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Collector characteristics of (A) a (QW)/GaAs heterojunction bipolar transistor (HBT) laser with decreased gain in the stimulated emission regions (2) and (3) compared with (B) (bottom) ordinary transistor operation with cavity spoiled [region (1), spontaneous recombination, ].

Image of FIG. 2.
FIG. 2.

Recombination radiation spectra (spontaneous and stimulated) of the transistor laser (A) of Fig. 1 at the base current bias points (a) 25, (b) 35 , (c) 44, and (d) .

Image of FIG. 3.
FIG. 3.

Gain values of the transistor laser (A) of Fig. 1 shown in comparison to ordinary (B) transistor operation at the same bias values as (a), (b), (c), and (d) shown in Fig. 2.

Image of FIG. 4.
FIG. 4.

(Color) Overlay of the collector characteristics of the transistor laser (A) of Fig. 1 on those of the same device operating as an ordinary transistor (B) (cavity spoiled by scattering at one mirror). A further region (, indicated in blue and red, suppressed to reduce clutter) shows, by the (A)-(B) overlay comparison, the stimulated recombination distortion in characteristics beyond regions (2) and (3) of Fig. 1 (yellow and green above).

Loading

Article metrics loading...

/content/aip/journal/apl/88/14/10.1063/1.2191448
2006-04-05
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191448
10.1063/1.2191448
SEARCH_EXPAND_ITEM