1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Surface anneal on strained for metal-oxide-semiconductor applications with as gate dielectric
Rent:
Rent this article for
USD
10.1063/1.2191468
/content/aip/journal/apl/88/14/10.1063/1.2191468
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191468
/content/aip/journal/apl/88/14/10.1063/1.2191468
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/88/14/10.1063/1.2191468
2006-04-04
2014-09-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface NH3 anneal on strained Si0.5Ge0.5 for metal-oxide-semiconductor applications with HfO2 as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191468
10.1063/1.2191468
SEARCH_EXPAND_ITEM