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Surface anneal on strained for metal-oxide-semiconductor applications with as gate dielectric
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10.1063/1.2191468
/content/aip/journal/apl/88/14/10.1063/1.2191468
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191468
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS data of Ge and Si spectra for DHF-cleaned substrate [curve (a)] and DHF-cleaned substrate with subsequent deposition of a layer of film [curve (b)]. The beam energy of the x-ray source and path energy of the photoelectron analyzer were fixed at 10 and , respectively.

Image of FIG. 2.
FIG. 2.

XPS data of Ge and Si spectra for DHF-cleaned substrate [curve (a)], DHF-cleaned substrate with surface nitridation treatment [curve (c)], and DHF-cleaned substrate with surface nitridation treatment and subsequent deposition of a layer of film [curve (d)]. The inset shows N spectrum of the substrate with surface nitridation and a thin layer of film [curve (d)]. The beam energy of the x-ray source and path energy of the photoelectron analyzer were fixed at 10 and , respectively.

Image of FIG. 3.
FIG. 3.

characteristics of the MOS capacitor without (solid line with open square) and with (solid line with open circle) surface nitridation treatment prior to deposition. The physical thickness of measured by an ellipsometer is .

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/content/aip/journal/apl/88/14/10.1063/1.2191468
2006-04-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface NH3 anneal on strained Si0.5Ge0.5 for metal-oxide-semiconductor applications with HfO2 as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191468
10.1063/1.2191468
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